Screening and interlayer coupling in multilayer graphene field-effect transistors

摘要

With the motivation of improving the performance and reliability ofaggressively scaled nano-patterned graphene field-effect transistors, wepresent the first systematic experimental study on charge and currentdistribution in multilayer graphene field-effect transistors. We find a veryparticular thickness dependence for Ion, Ioff, and the Ion/Ioff ratio, andpropose a resistor network model including screening and interlayer coupling toexplain the experimental findings. In particular, our model does not invokemodification of the linear energy-band structure of graphene for the multilayercase. Noise reduction in nano-scale few-layer graphene transistors isexperimentally demonstrated and can be understood within this model as well.